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Matériaux innovants pour lasers à 1,3 m sur substrat de GaAs = New materials for 1.3 m laser emission on GaAs substrateUngaro, Giovanni; Gallion, Philippe.2001, 137 p.Thesis

Transport électronique et émission cyclotron en infrarouge lointain sous pression hydrostatique, dans les hétérojonctions GaAs/GaAlAs et GaInAs/InP = Electronic transport and F.I.R. cyclotron emission under hydrostatic pressure, in the GaAs/GaAlAs and GaInAs/InP heterojunctionsMulot, Jean-Yves; Robert, J. L.1989, 145 p.Thesis

Analysis of temperature sensitive operation in 1.6-μm In_0.53Ga_0.47As lasersTAKESHIMA, M.Journal of applied physics. 1984, Vol 56, Num 3, pp 691-695, issn 0021-8979Article

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InGaAs/InP heterobipolar transistors for integration on semi-insulating InP substratesDÄMBKES, H; KÖNIG, U.Electronics Letters. 1984, Vol 20, Num 23, pp 955-957, issn 0013-5194Article

Theory of thermal behavior of laser operation in InD20_.53Ga_0.47AsTAKESHIMA, M.Journal of applied physics. 1984, Vol 56, Num 1, pp 49-56, issn 0021-8979Article

A design analysis of a GaInP/GaInAs/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulationNAWAZ, Muhammad; PERMTHAMMASIN, Komet.Semiconductor science and technology. 2001, Vol 16, Num 10, pp 877-884, issn 0268-1242Article

Carrier density saturation in a Ga_0.25In_0.75As/InP heterostructureMARTIN, T. P; MARLOW, C. A; SAMUELSON, L et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1754-1756, issn 1386-9477, 3 p.Conference Paper

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Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980 nmKLOPF, F; REITHMAIER, J. P; FORCHEL, A et al.Journal of crystal growth. 2001, Vol 227-28, pp 1151-1154, issn 0022-0248Conference Paper

Properties of In_xGa_1-xAs-GaAs strained-layer quantum-well-heterostructure injection lasersLAIDIG, W. D; LIN, Y. F; CALDWELL, P. J et al.Journal of applied physics. 1985, Vol 57, Num 1, pp 33-38, issn 0021-8979Article

Silicon oxide enhanced Schottky gate In_0.53Ga_0.47AsFET's with a self-aligned recessed gate structureCHENG, C. L; LIAO, A. S. H; CHANG, T. Y et al.IEEE electron device letters. 1984, Vol 5, Num 12, pp 511-514, issn 0741-3106Article

Near room temperature 1•3 μm single photon counting with a InGaAs avalanche photodiodeLEVINE, B. F; BETHEA, C. G; CAMPBELL, J. C et al.Electronics Letters. 1984, Vol 20, Num 14, pp 596-598, issn 0013-5194Article

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriersFRIEDRICH, A; BOEHM, G; AMANN, M. C et al.Semiconductor science and technology. 2007, Vol 22, Num 3, pp 218-221, issn 0268-1242, 4 p.Article

High-temperature (T=490 K) operation of 5.8 μm quantum cascade lasers with InP/GaInAs waveguidesFRIEDRICH, A; SCARPA, G; BOEHM, G et al.Electronics Letters. 2004, Vol 40, Num 22, pp 1416-1417, issn 0013-5194, 2 p.Article

Required grading length to eliminate the heterojunction spike in npn In_0.52Al_0.48As/In_0.53Ga_0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

Transistor à effet de champ, à hétérojonction et grille isolée : fabrication et étude de SISFET GaAs!AlGaAs et GaAs!GaInAs!AlGaAsSchmidt, Poul Erik; Pons.1989, 176 p.Thesis

GaInAsN/GaAs quantum dot laser diodes operating in 1.36μm wavelength rangeMARQUARDT, B; BISPING, D; FORCHEL, A et al.Electronics Letters. 2006, Vol 42, Num 14, pp 806-808, issn 0013-5194, 3 p.Article

GaInAs/InP surface emitting injection laser with a ring electrodeUCHIYAMA, S; IGA, K.IEEE journal of quantum electronics. 1984, Vol 20, Num 10, pp 1117-1118, issn 0018-9197Article

Design and lasing operation of micro-arc-ring lasersMITSUGI, S; KATO, J; KOYAMA, F et al.Japanese journal of applied physics. 1994, Vol 33, Num 11, pp 6201-6202, issn 0021-4922, 1Article

Calculation of gain and luminescence spectra of quantum-cascade laser structures taking into account asymmetric emission line broadeningUSHAKOV, D. V; KONONENKO, V. K; MANAK, I. S et al.Quantum electronics (Woodbury). 2010, Vol 40, Num 3, pp 195-198, issn 1063-7818, 4 p.Article

980 nm quantum dot lasers with very small threshold current densitiesKLOPF, F; REITHMAIER, J. P; FORCHEL, A et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 845-848, issn 0370-1972Conference Paper

Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μmKREBS, R; DEUBERT, S; REITHMAIER, J. P et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 742-747, issn 0022-0248, 6 p.Conference Paper

Reactor structure dependence of interface abruptness in GaInAs/InP and gainp/gaas grown by organometallic vapor phase epitaxyFUJIWARA, Yasufumi; NONOGAKI, Yoichi; RYO OGA et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 564-568, issn 0169-4332, 5 p.Conference Paper